Wafer Cleaning & Surface Prep
Ultra-pure chemicals for the industry-standard RCA cleaning sequences that every wafer passes through multiple times per fab flow.
- SC-1 Clean: NH₄OH + H₂O₂ + H₂O — removes particles and organic contaminants
- SC-2 Clean: HCl + H₂O₂ + H₂O — strips alkali metals and transition metal ions
- HF Dip: Dilute HF for native oxide removal before deposition and gate oxidation
- SPM Clean: H₂SO₄ + H₂O₂ for heavy organic contamination
HCl
HF
H₂O₂
Thin Film Deposition (CVD / PECVD / ALD)
Specialty gases and metalorganic precursors for depositing critical dielectric, barrier, and passivation layers in IC and PV manufacturing.
- SiNₓ PECVD: SiH₄ + NH₃ for anti-reflection coatings on solar cells and nitride passivation in ICs
- SiO₂ CVD: SiH₄-based thermal and plasma-enhanced oxide deposition
- Al₂O₃ ALD: TMA + H₂O for high-k gate dielectrics and rear-surface passivation (PERC/TOPCon)
- Polysilicon LPCVD: SiH₄ for gate electrode and emitter layers
SiH₄
NH₃
TMA
Etching & Oxide Removal
Electronic-grade etchants for precise material removal — from blanket oxide strips to pattern-defined features.
- Oxide Etch: HF and BOE (Buffered Oxide Etch) for SiO₂ removal with controlled etch rates
- Metal Etch: HCl-based solutions for removing metal contaminants and barrier layers
- Silicon Texturing: NaOH for alkaline pyramid texturing of monocrystalline PV wafers
- All etchants supplied at SEMI C7/C8 purity with sub-ppb metallic impurities
HF
HCl
NaOH
Doping & Diffusion
High-purity dopant sources for precise carrier concentration control in transistor junctions, emitter layers, and well formation.
- Phosphorus Diffusion: POCl₃ in tube furnaces at 800–900°C for n-type emitter formation in PERC/TOPCon solar cells
- N-Type Doping: PH₃/H₂ (2%) for ion implantation and diffusion in MOSFET n-channel regions
- P-Type Doping: B₂H₆/H₂ (2%) for boron doping in CMOS p-wells and source/drain junctions
- Pre-diluted gas mixtures for safer handling and precise dopant concentration control
POCl₃
PH₃/H₂
B₂H₆/H₂
Chamber Cleaning
Reactor cleaning gases that maintain CVD/PECVD chamber performance and extend maintenance intervals.
- In-Situ Clean: NF₃ plasma for removing Si, SiNₓ, and SiO₂ deposits from reactor walls and showerheads
- Remote Plasma Clean: NF₃ dissociated in remote plasma source for gentler, more uniform chamber cleaning
- Lower global warming potential vs. legacy PFC chamber cleans
- High-purity grade prevents introduction of new contaminants during the clean cycle
NF₃
Supply Chain & Technical Support
Beyond products — the logistics, documentation, and process knowledge that fab operations require from a chemical supplier.
- Documentation: Full COA with trace-metal analysis, SDS, and lot traceability for every shipment
- Hazmat Logistics: DOT/IATA-certified shipping for pyrophoric gases, corrosives, and toxics
- Inventory Programs: Scheduled deliveries, VMI, and safety-stock management to prevent line-down events
- Process Consultation: Application-specific guidance on grade selection, compatibility, and handling